US Patent Issued to United Microelectronics on Aug. 19 for "High electron mobility transistor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,195, issued on Aug. 19, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"High electron mobility transistor device and manufacturing method thereof" was invented by Huai-Tzu Chiang (Tainan, Taiwan), Kai Lin Lee (Kinmen County, Taiwan), Zhi-Cheng Lee (Tainan, Taiwan) and Chuang-Han Hsieh (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor (HEMT) device includes a substrate, a channel layer, a source, a drain, a buffer layer, and a plurality of amorphous regions. The channel layer is located above the substrate. The source is located on the channel layer. The drain is located on the channe...