US Patent Issued to UNITED MICROELECTRONICS on Aug. 19 for "HEMT and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,201, issued on Aug. 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"HEMT and method of fabricating the same" was invented by Chi-Hsiao Chen (Chiayi, Taiwan), Kai-Lin Lee (Kinmen County, Taiwan) and Wei-Jen Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer."...