US Patent Issued to UNITED MICROELECTRONICS on Aug. 12 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,807, issued on Aug. 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Jin-Yan Chiou (Tainan, Taiwan), Wei-Chuan Tsai (Changhua County, Taiwan), Hsin-Fu Huang (Tainan, Taiwan), Yen-Tsai Yi (Tainan, Taiwan) and Hsiang-Wen Ke (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a contact hole in the first IMD layer; forming a bottom electrode layer in the contact hole; forming a magnetic tunneling junct...