ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,808, issued on Aug. 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Hung-Chan Lin (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of forming a first inter-metal dielectric (IMD) layer, forming two via holes and a trench in the first IMD layer, forming a metal layer in the two via holes and the trench for forming a metal interconnection and a spin orbit torque (SOT) layer, forming a magnetic tunneling junction (MTJ) on the SOT layer, forming a first hard mask on the MTJ, formi...