US Patent Issued to UNITED MICROELECTRONICS on Aug. 12 for "MRAM structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,606, issued on Aug. 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"MRAM structure and fabricating method of the same" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Fu-Yu Tsai (Tainan, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM structure includes a first memory unit and a second memory unit. A conductive line is disposed between the first memory unit and the second memory unit. An SOT metal conductive line contacts and electrically connects an end of the first memory unit, an end of the conductive line and an end of the second memory unit. A first switch element...