US Patent Issued to UNITED MICROELECTRONICS on Aug. 12 for "Layout pattern for static random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,583, issued on Aug. 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Layout pattern for static random access memory" was invented by Shu-Wei Yeh (Tainan, Taiwan), Han-Tsun Wang (Tainan, Taiwan) and Chang-Hung Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a layout pattern cell of a static random access memory (SRAM), which at least comprises a first SRAM cell, a plurality of gate structures spanning a plurality of fin structures, so as to form a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first access transistor...