US Patent Issued to UNITED MICROELECTRONICS on Aug. 12 for "High electron mobility transistor and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,624, issued on Aug. 12, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for forming the same" was invented by Po-Yu Yang (Hsinchu, Taiwan) and Hsun-Wen Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes an epitaxial stack on a substrate, a gate structure on the epitaxial stack, a passivation layer on the epitaxial stack and the gate structure, and an air gap between the passivation layer and the gate structure. The gate structure includes a semiconductor gate layer and a metal gate layer on the semiconductor gate layer. The a...