US Patent Issued to United Microelectronics on April 29 for "Nitride semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,914, issued on April 29, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Nitride semiconductor device and manufacturing method thereof" was invented by Chih Tung Yeh (Taoyuan, Taiwan) and Wen-Jung Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a nitride semiconductor device and a manufacturing method thereof. The nitride semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first metal layer, a second metal layer and a dielectric layer. The first nitride semiconductor layer is disposed on the substrate. The second nitride semiconduct...