US Patent Issued to UNITED MICROELECTRONICS on April 29 for "Magnetoresistive random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,290,005, issued on April 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory" was invented by Hui-Lin Wang (Taipei, Taiwan), Yu-Ping Wang (Hsinchu, Taiwan), Chen-Yi Weng (New Taipei, Taiwan), Chin-Yang Hsieh (Tainan, Taiwan), Si-Han Tsai (Taichung, Taiwan), Che-Wei Chang (Taichung, Taiwan) and Jing-Yin Jhang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from ...