US Patent Issued to UNITED MICROELECTRONICS on April 29 for "Magnetic memory device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,289,897, issued on April 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetic memory device and method for forming the same" was invented by Hui-Lin Wang (Taipei, Taiwan) and Jing-Yin Jhang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a dielectric cap layer disposed on the MTJ stack, and a metal cap layer disposed on the dielectric cap layer, wherein the metal cap layer comprises a plurality of first metal layers and second metal layers alternately stacked on the dielect...