US Patent Issued to UNITED MICROELECTRONICS on April 22 for "MOS capacitor and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,637, issued on April 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"MOS capacitor and fabrication method thereof" was invented by Jian-Li Lin (Kaohsiung, Taiwan), Wei-Da Lin (Kaohsiung, Taiwan), Cheng-Guo Chen (Changhua County, Taiwan), Ta-Kang Lo (Taoyuan, Taiwan), Yi-Chuan Chen (Tainan, Taiwan), Huan-Chi Ma (Tainan, Taiwan), Chien-Wen Yu (Kaohsiung, Taiwan), Kuan-Ting Lu (Tainan, Taiwan) and Kuo-Yu Liao (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping...