US Patent Issued to UNITED MICROELECTRONICS on April 15 for "Method for fabricating a fin with minimal length between two single-diffusion break (SDB) trenches" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,265, issued on April 15, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for fabricating a fin with minimal length between two single-diffusion break (SDB) trenches" was invented by Chien-Heng Liu (Pingtung County, Taiwan), Chia-Wei Huang (Kaohsiung, Taiwan), Hsin-Jen Yu (Tainan, Taiwan), Yung-Feng Cheng (Kaohsiung, Taiwan) and Ming-Jui Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating minimal fin length includes the steps of first forming a fin-shaped structure extending along a first direction on a substrate, forming a first single-diffusion break (SDB) trench and a second SDB tr...