US Patent Issued to UNITED MICROELECTRONICS on April 15 for "Manufacturing method of semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,446, issued on April 15, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Manufacturing method of semiconductor device" was invented by Tsung-Yu Yang (Chiayi County, Taiwan), Shin-Hung Li (Nantou County, Taiwan), Ruei-Jhe Tsao (New Taipei, Taiwan) and Che-Hua Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a gate structure, a first drift region, a first source/drain region, and a gate oxide layer. The gate structure and the gate oxide layer are disposed on the semiconductor substrate. The first drift region is disposed in the semiconductor substrate....