US Patent Issued to UNITED MICROELECTRONICS on April 1 for "Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region" (Taiwanese Inventors)

ALEXANDRIA, Va., April 2 -- United States Patent no. 12,268,098, issued on April 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region" was invented by Chung-Liang Chu (Kaohsiung, Taiwan), Jian-Cheng Chen (New Taipei, Taiwan), Yu-Ping Wang (Hsinchu, Taiwan) and Yu-Ruei Chen (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, a gap between the array region and the ring of MTJ region, and metal interco...