US Patent Issued to UNITED MICROELECTRONICS, Fujian Jinhua Integrated Circuit on May 27 for "Method for forming memory device with buried gate in peripheral circuit region" (Japanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,474, issued on May 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan) and Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Method for forming memory device with buried gate in peripheral circuit region" was invented by Yukihiro Nagai (Saijo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure for a memory device, including providing a substrate comprising a memory cell region and a peripheral circuit region defined thereon, and the peripheral circuit region comprising at least an active region formed therein, forming at least a buried gate structure in the active region, ...