US Patent Issued to UNITED MICROELECTRONICS, Fujian Jinhua Integrated Circuit on July 1 for "Method of forming semiconductor memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,340, issued on July 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan) and Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Method of forming semiconductor memory device" was invented by Yi-Wei Chen (Taichung, Taiwan), Hsu-Yang Wang (Tainan, Taiwan), Chun-Chieh Chiu (Keelung, Taiwan) and Shih-Fang Tzou (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering...