ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,646, issued on April 8, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan) and Fujian Jinhua Integrated Circuit Co. Ltd. (Quanzhou, China).

"Semiconductor memory device" was invented by Feng-Yi Chang (Tainan, Taiwan), Shih-Fang Tzou (Tainan, Taiwan), Fu-Che Lee (Taichung, Taiwan), Chien-Cheng Tsai (Kaohsiung, Taiwan) and Feng-Ming Huang (Pingtung County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening...