ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,031, issued on Sept. 16, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Semiconductor-element-including memory device" was invented by Nozomu Harada (Tokyo), Masakazu Kakumu (Tokyo) and Koji Sakui (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "Si bodies 24aa to 24ad, 24ba to 24bd, and 45a to 45d are disposed parallel to a substrate 20 and are adjacent to each other in a horizontal direction at regular intervals. A HfO2 layer 27b surrounds the Si bodies 24aa to 45d. TiN layers 34a to 34d surround the HfO2 layer 27b, are isolated from each other, and are each formed of portions contiguous in the horizontal direction. T...