ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,804, issued on Oct. 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Semiconductor element memory cell and semiconductor element memory device" was invented by Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "By controlling voltages applied to plate lines, word lines, source lines, and bit lines, a memory device that uses semiconductor elements performs a data retention operation of holding positive hole groups formed by an impact ionization phenomenon or by a gate-induced drain leakage current in a semiconductor base material, and a memory erase operation of removing positive hole g...