ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,805, issued on Oct. 7, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Semiconductor device including memory element" was invented by Nozomu Harada (Tokyo), Masakazu Kakumu (Tokyo) and Koji Sakui (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including a memory cell and a MOS transistor. The memory cell includes a first gate insulating layer and a first gate conductor layer surrounding a first pillar-shaped p layer erected on a first p layer substrate, and a second gate insulating layer, a second gate conductor layer, and N+ layers surrounding a second pillar-shaped p layer connected t...