ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,478, issued on May 27, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Semiconductor memory device" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A p layer is a semiconductor base material. An n+ layer is disposed on one extension side of the layer. An n+ layer is disposed on the opposite side in contact with the layer. A gate insulating layer partially covers the layers. A gate conductor layer is disposed in contact with the layer. A gate insulating layer partially covers the layers. A gate conductor layer is disposed in electrical separati...