ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,475, issued on May 27, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Semiconductor element memory device" was invented by Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device according to the present invention includes memory cells, each of the memory cells includes a semiconductor base material that is formed on a substrate and that stands on the substrate in a vertical direction, voltages applied to a first gate conductor layer, a second gate conductor layer, a first impurity layer, and a second impurity layer in each of the memory cells are controlled to perform a wri...