ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,548, issued on May 13, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Memory device using semiconductor element" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A groove is formed in a first semiconductor layer 1, a sidewall of the groove is coated with a first insulating film 2, a first impurity layer 3 and a second impurity layer 4 thereon are disposed in the groove, a second semiconductor layer 7 is disposed on the second impurity layer, a first semiconductor is disposed at the other part, an n+ layer 6a and an n+ layer 6c are positioned a...