ALEXANDRIA, Va., July 23 -- United States Patent no. 12,367,922, issued on July 22, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Semiconductor element memory device" was invented by Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a columnar semiconductor memory device in which a data retention operation is performed in which voltages applied to a first gate conductor layer, a second gate conductor layer, a first impurity region, and a second impurity region are controlled to retain a group of positive holes, generated by an impact ionization phenomenon or a gate-induced drain leakage current, inside a semiconductor body, ...