ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,301, issued on July 22, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Memory device with semiconductor elements" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A dynamic flash memory includes a p layer as a semiconductor base material, first and second n+ layers on opposite sides thereof, first and second gate insulating layers in contact with each other and partially covering the p layer, and first and second gate conductor layers electrically isolated from each other and respectively provided on the first and second gate insulating layers...