US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on April 22 for "Memory device with single-transistor DRAM cells with no capacitors, and memory cells stacked in the vertical direction using gate-all-around (GAA) technology" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,310, issued on April 22, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Memory device with single-transistor DRAM cells with no capacitors, and memory cells stacked in the vertical direction using gate-all-around (GAA) technology" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first insulating layer 21 is disposed on a substrate 20. N+ layers 2 are separated from the insulating layer and in directions horizontal and vertical to the substrate. P layers 1 contact the n+ layers 2 and extend in the horizontal direction. N+ layers 3 contact the ...