ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,306, issued on April 22, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).
"Memory device including semiconductor" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "A p layer extending in a direction horizontal to a substrate is provided separately from the substrate. An n+ layer is provided on one side of the layer. A gate insulating layer partially covers the layers. A gate conductor layer partially covers the layer. A gate insulating layer partially covering the layer is provided separately from the layer. A gate conductor layer partially covers ...