US Patent Issued to UNISANTIS ELECTRONICS SINGAPORE on April 15 for "Memory device using semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,411, issued on April 15, was assigned to UNISANTIS ELECTRONICS SINGAPORE PTE. LTD. (Singapore).

"Memory device using semiconductor device" was invented by Masakazu Kakumu (Tokyo), Koji Sakui (Tokyo) and Nozomu Harada (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "First and second impurity layers are formed on a first semiconductor layer on a substrate. A third gate insulating layer covers side walls of the impurity layers and the first semiconductor layer. First and second gate conductor layers and a second insulating layer are formed in a groove, and n+-layers connected to source and bit lines are formed at ends of a second semiconductor laye...