ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,940, issued on Nov. 18, was assigned to UNIM Innovation (Wuxi) Co. Ltd. (Wuxi, China).
"Method for controlling NAND flash memory to implement XNOR operation" was invented by Qiang Tang (Wuxi, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a method for controlling a NAND flash memory to implement an XNOR operation. First word lines and second word lines are connected to sense amplifiers in a one-to-one correspondence manner. The XNOR operation of the NAND flash memory is implemented by controlling a data storage mode and a voltage of the word lines."
The patent was filed on Dec. 11, 2023, under Application No. 18...