US Patent Issued to UIF (University Industry Foundation), Yonsei University on Nov. 11 for "Oxide thin film transistor including photocatalyst layer and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,321, issued on Nov. 11, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea).

"Oxide thin film transistor including photocatalyst layer and method for manufacturing the same" was invented by Hyun Jae Kim (Seoul, South Korea), Jong Bin An (Seoul, South Korea), Sujin Jung (Seoul, South Korea), Kunho Moon (Goyang-si, South Korea), Jong Hyuk Ahn (Seoul, South Korea), I Sak Lee (Paju-si, South Korea) and Dong Hyun Choi (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method for manufacturing an oxide thin film transistor including forming a gate electrode on a substrate, forming an ...