US Patent Issued to UIF (University Industry Foundation), Yonsei University on March 25 for "SRAM with improved write performance and write operation method thereof" (South Korean Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,260,905, issued on March 25, was assigned to UIF (University Industry Foundation), Yonsei University (Seoul, South Korea).

"SRAM with improved write performance and write operation method thereof" was invented by Seong Ook Jung (Seoul, South Korea), Keon Hee Cho (Seoul, South Korea), Ji Sang Oh (Seoul, South Korea) and Min June Yeo (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SRAM comprises: a memory cell array in which a plurality of memory cells each defined by a word line and a bit line pair are arranged; a write driver that applies a write voltage corresponding to the applied data to a bit line pair connected to the memory ...