US Patent Issued to UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY on Jan. 13 for "Method for manufacturing device comprising halide perovskite active layer, and power generation devices" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,225, issued on Jan. 13, was assigned to UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY (Seoul, South Korea).

"Method for manufacturing device comprising halide perovskite active layer, and power generation devices" was invented by Yong Soo Cho (Seoul, South Korea) and Da Bin Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power generation device manufacturing method and a power generation device are proposed. In one embodiment, the method includes (a) forming a halide perovskite active layer on a flexible substrate bent by a stress applied thereto and (b) releasing the stress applied to the substrate on which the ha...