ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,446,476, issued on Oct. 14, was assigned to UCL Business Ltd. (London).
"Method for manufacturing a memory resistor device" was invented by Anthony Kenyon (London), Adnan Mehonic (London) and Wing Ng (London).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a memory resistor device. A first layer of a dielectric material is deposited onto a first electrode. A subsection of the first layer of the dielectric material is removed to expose one or more edges of the dielectric material and a second layer of the dielectric material is deposited to create one or more boundaries between the one or more edges of the first layer of the diel...