US Patent Issued to Tsinghua University, HON HAI PRECISION INDUSTRY on June 17 for "Tunneling transistor" (Chinese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,204, issued on June 17, was assigned to Tsinghua University (Beijing) and HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei, Taiwan).

"Tunneling transistor" was invented by Gao-Tian Lu (Beijing), Yang Wei (Beijing), Shou-Shan Fan (Beijing) and Yue-Gang Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and th...