US Patent Issued to Tsinghua University, HON HAI PRECISION INDUSTRY on Jan. 20 for "Field effect transistor and method for making the same" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,496, issued on Jan. 20, was assigned to Tsinghua University (Beijing) and HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei, Taiwan).

"Field effect transistor and method for making the same" was invented by Xuan-Zhang Li (Beijing), Yang Wei (Beijing), Shou-Shan Fan (Beijing) and Yue-Gang Zhang (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor includes a gate electrode, an insulating layer, a source electrode, a drain electrode, and a channel layer. The insulating layer is located on the surface of the gate electrode, and the channel layer is located on the surface of the insulating layer away from the gate electrode. Th...