US Patent Issued to Tsinghua University, HON HAI PRECISION INDUSTRY on Dec. 9 for "Logic gate device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,584, issued on Dec. 9, was assigned to Tsinghua University (Beijing) and HON HAI PRECISION INDUSTRY Co. LTD. (New Taipei, Taiwan).

"Logic gate device" was invented by Guang-Qi Zhang (Beijing), Yang Wei (Beijing) and Shou-Shan Fan (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a logic gate device. The logic gate device includes a gate electrode, a gate insulating layer, a bottom electrode, a two-dimensional semiconductor layer, a first top electrode and a second electrode. The gate insulating layer is located on the gate electrode. The bottom electrode is located on the gate insulating layer. The two-dimension...