US Patent Issued to Transphorm Technology on Feb. 10 for "III-nitride devices with through-via structures" (California Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,702, issued on Feb. 10, was assigned to Transphorm Technology Inc. (Goleta, Calif.).

"III-nitride devices with through-via structures" was invented by Geetak Gupta (Goleta, Calif.), Umesh Mishra (Montecito, Calif.), Davide Bisi (Goleta, Calif.), David Michael Rhodes (Santa Barbara, Calif.), Rakesh K. Lal (Isla Vista, Calif.) and Carl Joseph Neufeld (Goleta, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a III-N device including an insulating substrate. The insulating substrate includes a first side and a second side. The device further includes a III-N material structure on a first side of the insulating subst...