US Patent Issued to TOYOTA JIDOSHA on Sept. 30 for "Method of forming bismuth-containing gallium oxide-based semiconductor film on base material, bismuth-containing gallium oxide-based semiconductor film, and bismuth-containing gallium oxide-based semiconductor component" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,352, issued on Sept. 30, was assigned to TOYOTA JIDOSHA K.K. (Toyota, Japan).

"Method of forming bismuth-containing gallium oxide-based semiconductor film on base material, bismuth-containing gallium oxide-based semiconductor film, and bismuth-containing gallium oxide-based semiconductor component" was invented by Hayate Yamano (Susono, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method of forming a bismuth-containing gallium oxide-based semiconductor film on a base material by a pulse laser deposition method using a target containing gallium oxide and bismuth oxide. In the method, the temperature of the base material i...