US Patent Issued to TOYOTA JIDOSHA on Sept. 23 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,318, issued on Sept. 23, was assigned to TOYOTA JIDOSHA K.K. (Toyota, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Katsunori Danno (Obu, Japan) and Tetsuya Shoji (Susono, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device including an n-type gallium oxide semiconductor layer that has a center region and a peripheral region having a lower donor density than the center region, an electrode layer that is laminated on the n-type gallium oxide semiconductor layer, and forms Schottky junction with the n-type gallium oxide semiconductor layer in t...