ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,422, issued on July 1, was assigned to TOYOTA JIDOSHA K.K. (Toyota, Japan).
"Semiconductor device" was invented by Katsunori Danno (Obu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a semiconductor device, p-type semiconductor layers are stacked on a first surface side of n-type gallium oxide semiconductor layer such that the p-type semiconductor layers are in contact with the n-type gallium oxide semiconductor layer; a first electrode layer is stacked on the first surface side of the n-type gallium oxide semiconductor layer such that the first electrode layer is in contact with the p-type semiconductor layers and is in contact with the n-...