US Patent Issued to TOWER PARTNERS SEMICONDUCTOR, TOWER SEMICONDUCTOR on Sept. 30 for "Semiconductor device having a memory element with a source region and drain region and having multiple assistance elements" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,915, issued on Sept. 30, was assigned to TOWER PARTNERS SEMICONDUCTOR Co. LTD. (Uozu, Japan) and TOWER SEMICONDUCTOR LTD. (Migdal Haemek, Israel).

"Semiconductor device having a memory element with a source region and drain region and having multiple assistance elements" was invented by Hiroshige Hirano (Nara, Japan), Hiroaki Kuriyama (Toyama, Japan) and Atsushi Noma (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a memory cell on a semiconductor substrate. The memory cell includes a memory element, a first assistance element, and a second assistance element. The memory element includes a source region ...