ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,119, issued on Sept. 16, was assigned to TOWER PARTNERS SEMICONDUCTOR Co. LTD. (Uozu, Japan) and TOWER SEMICONDUCTOR LTD. (Migdal Haemek, Israel).
"Solid-state imaging device" was invented by Masahiro Oda (Hyogo, Japan), Hiroki Takahashi (Osaka, Japan), Hiroyuki Doi (Kyoto, Japan) and Hirohisa Otsuki (Hyogo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer...