US Patent Issued to TOSOH on Sept. 9 for "Gallium nitride-based sintered body and method for manufacturing same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,410,101, issued on Sept. 9, was assigned to TOSOH Corp. (Shunan, Japan).

"Gallium nitride-based sintered body and method for manufacturing same" was invented by Masami Mesuda (Ayase, Japan), Hideto Kuramochi (Ayase, Japan) and Yuya Tsuchida (Ayase, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor...