US Patent Issued to Tokyo Institute of Technology on June 24 for "Non-volatile ferroelectric storage element and devices comprising them" (Japanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,547, issued on June 24, was assigned to Tokyo Institute of Technology (Tokyo).

"Non-volatile ferroelectric storage element and devices comprising them" was invented by Kuniyuki Kakushima (Tokyo), Hiroshi Funakubo (Tokyo), Shun-Ichiro Ohmi (Tokyo), Joel Molina Reyes (Tokyo), Ichiro Fujiwara (Tokyo), Atsushi Hori (Tokyo), Takao Shimizu (Tokyo), Yoshiko Nakamura (Tokyo) and Takanori Mimura (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a non-volatile storage element and non-volatile storage device employing a ferroelectric material with low power consumption, excellent high reliability, and especially write/erase endurance...