US Patent Issued to Tokyo Electron on Sept. 9 for "Tapered device for lateral gate all around devices" (New York, Vermont Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,367, issued on Sept. 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"Tapered device for lateral gate all around devices" was invented by Lars Liebmann (Mechanicville, N.Y.), Jeffrey Smith (Clifton Park, N.Y.), Daniel Chanemougame (Niskayuna, N.Y.) and Paul Gutwin (Williston, Vt.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the present disclosure provide a semiconductor structure. For example, the semiconductor structure can include a lower channel structure, an upper channel structure formed vertically over the lower channel, a first transistor device including lower and upper gates formed around a first portion of the lower and upper...