US Patent Issued to Tokyo Electron on Sept. 9 for "Plasma processing method and plasma processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,750, issued on Sept. 9, was assigned to Tokyo Electron Ltd. (Tokyo).

"Plasma processing method and plasma processing apparatus" was invented by Shinya Ishikawa (Miyagi, Japan), Kenta Ono (Miyagi, Japan) and Masanobu Honda (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A technique can control the dimensions of an opening. A plasma processing method includes (a) providing a substrate including an etching target layer, and a mask layer located on an upper surface of the etching target layer and having a side surface defining at least one opening on the upper surface of the etching target layer and an extension from the side surface to a...