ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,749, issued on Sept. 9, was assigned to Tokyo Electron Ltd. (Tokyo).
"Etching method and plasma processing system" was invented by Maju Tomura (Miyagi, Japan) and Yoshihide Kihara (Miyagi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An etching method includes: (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film in a chamber of a plasma processing apparatus, and (b) etching the silicon-containing film by generating plasma from a processing gas containing HF gas, and PClaFb gas (each of a and b is an integer of 1 or more) or PCcHdFe gas (c is an integer of 0 or more, and each of d and e is an ...