US Patent Issued to Tokyo Electron on Sept. 30 for "Technologies for fabricating a vertical DRAM structure" (New York Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,901, issued on Sept. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Technologies for fabricating a vertical DRAM structure" was invented by Sang Cheol Han (Albany, N.Y.), Soo Doo Chae (Albany, N.Y.) and Sunghil Lee (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Technologies for fabricating a vertical dynamic random access memory (DRAM) structure include forming a DRAM cell hole through a word line layer and an associated substrate such that a first section of the DRAM cell hole extends through the word line layer and a second section of the DRAM cell hole extends through the substrate in vertical alignment with the first section. A...