ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,335, issued on Sept. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Substrate processing method and substrate processing apparatus" was invented by Yuta Nakane (Miyagi, Japan), Sho Kumakura (Miyagi, Japan) and Shinya Ishikawa (Miyagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one exemplary embodiment, a substrate processing method is provided. This substrate processing method comprises the steps of: providing a substrate including a metal compound film and a mask defining an opening on the metal compound film to a plasma processing chamber; and etching the metal compound film by forming a plasma from a first processing gas includin...