US Patent Issued to Tokyo Electron on Sept. 30 for "Method for etching high aspect ratio features within a dielectric using a hard mask stack having multiple hard mask layers" (New York Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,362, issued on Sept. 30, was assigned to Tokyo Electron Ltd. (Tokyo).

"Method for etching high aspect ratio features within a dielectric using a hard mask stack having multiple hard mask layers" was invented by JinYing Lin (Albany, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of stacked structures, process steps and methods are provided herein for etching high aspect ratio features (e.g., contact holes, vias, trenches, etc.) within one or more underlying layers of a stacked structure to reduce or eliminate problems that occur during conventional high aspect ratio (HAR) etch processes (such as, e.g., bowing, twisting, dist...